vishay siliconix SI4804CDY new product document number: 68924 s-82485-rev. a, 13-oct-08 www.vishay.com 1 dual n-channel 30-v (d-s) mosfet features ? halogen-free ?trenchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested applications ? dc/dc ? notebook system power notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 120 c/w. product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 30 0.022 at v gs = 10 v 8 7 0.027 at v gs = 4.5 v 7.9 s 1 g 1 d 2 d 1 d 1 s 2 g 2 d 2 so- 8 5 6 7 8 top v ie w 2 3 4 1 orderin g information: si4 8 04cdy-t1-ge3 (lead (p b )-free and halogen-free) n - c hannel m os fet g 1 d 1 s 1 n - c hannel m os fet g 2 d 2 s 2 absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 8.0 a t c = 70 c 7.1 t a = 25 c 7.1 b, c t a = 70 c 5.5 b, c pulsed drain current (10 s pulse width) i dm 30 source-drain current diode current t c = 25 c i s 2.4 t a = 25 c 1.8 b, c pulsed source-drain current i sm 30 single pulse avalanche current l = 0.1 mh i as 10 single pulse avalanche energy e as 5 mj maximum power dissipation t c = 25 c p d 3.1 w t c = 70 c 2 t a = 25 c 2 b, c t a = 70 c 1.28 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 10 s r thja 49 62.5 c/w maximum junction-to-foot (drain) steady state r thjf 32 40 rohs compliant
www.vishay.com 2 document number: 68924 s-82485-rev. a, 13-oct-08 vishay siliconix SI4804CDY new product notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 % stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient v ds /t j i d = 250 a 31 mv/c v gs(th) temperature coefficient v gs(th) /t j - 5.1 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 2.4 v gate body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 20 a drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 7.5 a 0.018 0.022 v gs = 4.5 v, i d = 6.5 a 0.022 0.027 forward transconductance b g fs v ds = 15 v, i d = 7.5 a 20 s dynamic a input capacitance c iss n-channel v ds = 15 v, v gs = 0 v, f = 1 mhz 865 pf output capacitance c oss 131 reverse transfer capacitance c rss 66 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 7.5 a 15.4 23 nc n-channel v ds = 15 v, v gs = 4.5 v, i d = 7.5 a 7 10.5 gate-source charge q gs 2.3 gate-drain charge q gd 2.2 gate resistance r g f = 1 mhz 0.4 1.9 3.8 tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 15 v, r l = 3 i d ? 5 a, v gen = 10 v, r g = 1 918 ns rise time t r 12 24 turn-off delay time t d(off) 17 34 fall time t f 918 tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 15 v, r l = 3 i d ? 5 a, v gen = 4.5 v, r g = 1 17 34 rise time t r 13 26 turn-off delay time t d(off) 19 35 fall time t f 918 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 2.4 a pulse diode forward current a i sm 30 body diode voltage v sd i s = 1.8 a 0.77 1.1 v body diode reverse recovery time t rr n-channel i f = 5 a, di/dt = 100 a/s, t j = 25 c 16 32 ns body diode reverse recovery charge q rr 816nc reverse recovery fall time t a 10 ns reverse recovery rise time t b 6
document number: 68924 s-82485-rev. a, 13-oct-08 www.vishay.com 3 vishay siliconix SI4804CDY new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 6 12 1 8 24 30 0.0 0.5 1.0 1.5 2.0 2.5 v ds - drain-to-so u rce v oltage ( v ) i d - drain c u rrent (a) v gs =10thr u 4 v v gs =3 v 0.016 0.01 8 0.020 0.022 0.024 0.026 06121 8 24 30 r ds(on) - on-resistance ( ) i d - drain c u rrent (a) v gs =10 v v gs =4.5 v 0 2 4 6 8 10 0.0 3.2 6.4 9.6 12. 8 16.0 i d =7.5a v gs - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v ds =15 v v ds =10 v v ds = 20 v transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 012345 v gs - gate-to-so u rce v oltage ( v ) i d - drain c u rrent (a) t c = - 55 c t c = 25 c t c = 125 c c rss 0 220 440 660 88 0 1100 0 6 12 1 8 24 30 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) v gs =10 v i d = 7.5 a v gs =4.5 v
www.vishay.com 4 document number: 68924 s-82485-rev. a, 13-oct-08 vishay siliconix SI4804CDY new product typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd - so u rce-to-drain v oltage ( v ) i s - so u rce c u rrent (a) 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c - 0. 8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 v ariance ( v ) v gs(th) t j - temperat u re (c) i d =250 a i d =5 ma on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.02 0.04 0.06 0.0 8 0.10 01234567 8 910 r ds(on) - on-resistance ( ) v gs - gate-to-so u rce v oltage ( v ) t j = 25 c t j = 125 c 0 10 20 30 40 50 0 1 1 1 0 0 . 00.01 time (s) po w er ( w ) 0.1 safe operating area 0.01 100 1 100 0.01 i d - drain c u rrent (a) 0.1 v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 0.1 1 10 10 t a = 25 c single p u lse dc 10 s b v dss limited b yr ds(on) * 1 s 100 ms 10 ms 1ms
document number: 68924 s-82485-rev. a, 13-oct-08 www.vishay.com 5 vishay siliconix SI4804CDY new product mosfet typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 10 0 25 50 75 100 125 150 t c - case temperat u re (c) i d - drain c u rrent (a) power, junction-to-foot 0.0 0. 8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) power derating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a - am b ient temperat u re (c) po w er ( w )
www.vishay.com 6 document number: 68924 s-82485-rev. a, 13-oct-08 vishay siliconix SI4804CDY new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68924. normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =120 c 3. t jm -- t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 0.02 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse 0.02 0.05
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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